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| NTHD5903T1 Power MOSFET Dual P-Channel ChipFETE 2.1 Amps, 20 Volts Features * Low RDS(on) for Higher Efficiency * Logic Level Gate Drive * Miniature ChipFET Surface Mount Package Saves Board Space Applications http://onsemi.com * Power Management in Portable and Battery-Powered Products; i.e., Cellular and Cordless Telephones and PCMCIA Cards DUAL P-CHANNEL 2.1 AMPS, 20 VOLTS RDS(on) = 155 mW S1 S2 MAXIMUM RATINGS (TA = 25C unless otherwise noted) Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150C) (Note 1) TA = 25C TA = 85C Pulsed Drain Current Continuous Source Current (Diode Conduction) (Note 1) Maximum Power Dissipation (Note 1) TA = 25C TA = 85C Operating Junction and Storage Temperature Range Symbol VDS VGS ID "2.9 "2.1 IDM IS PD 2.1 1.1 TJ, Tstg 1.1 0.6 C -1.8 "10 -0.9 "2.1 "1.5 A A W ChipFET CASE 1206A STYLE 2 5 secs Steady State Unit V V A D1 P-Channel MOSFET D2 P-Channel MOSFET G1 G2 -20 "12 -55 to +150 1. Surface Mounted on 1 x 1 FR4 Board. PIN CONNECTIONS MARKING DIAGRAM 1 2 3 4 A7 8 7 6 5 D1 D1 D2 D2 8 7 6 5 1 2 3 4 S1 G1 S2 G2 A7 = Specific Device Code ORDERING INFORMATION Device NTHD5903T1 Package ChipFET Shipping 3000/Tape & Reel (c) Semiconductor Components Industries, LLC, 2002 1 March, 2002 - Rev. 2 Publication Order Number: NTHD5903T1/D NTHD5903T1 THERMAL CHARACTERISTICS Characteristic Maximum Junction-to-Ambient (Note 2) t v 5 sec Steady State Maximum Junction-to-Foot (Drain) Steady State Symbol RthJA 50 90 RthJF 30 60 110 40 C/W Typ Max Unit C/W ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current VGS(th) IGSS IDSS VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "12 V VDS = -16 V, VGS = 0 V VDS = -16 V, VGS = 0 V, TJ = 85C On-State Drain Current (Note 3) Drain-Source On-State Resistance (Note 3) ID(on) rDS(on) () VDS v -5.0 V, VGS = -4.5 V VGS = -4.5 V, ID = -2.1 A VGS = -3.6 V, ID = -2.0 A VGS = -2.5 V, ID = -1.7 A Forward Transconductance (Note 3) Diode Forward Voltage (Note 3) Dynamic (Note 4) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = -0.9 A, di/dt = 100 A/ms VDD = -10 V, RL = 10 W ID ^ -1.0 A, VGEN = -4 5 V -1 0 A -4.5 V, RG = 6 W VDS = -10 V VGS = -4.5 V 10 V, 4 5 V, ID = -2.1 A - - - - - - - - 3.0 0.9 0.6 13 35 25 25 40 6.0 - - 20 55 40 40 80 ns nC gfs VSD VDS = -10 V, ID = -2.1 A IS = -0.9 A, VGS = 0 V -0.6 - - - -10 - - - - - - - - - - 0.130 0.150 0.215 5.0 -0.8 - "100 -1.0 -5.0 - 0.155 0.180 0.260 - -1.2 S V A W V nA mA Symbol Test Condition Min Typ Max Unit 2. Surface Mounted on 1 x 1 FR4 Board. 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 4. Guaranteed by design, not subject to production testing. http://onsemi.com 2 NTHD5903T1 TYPICAL ELECTRICAL CHARACTERISTICS 10 VGS = 4 V - 10 V ID, DRAIN CURRENT (AMPS) 8 TJ = 25C 6 3.6 V ID, DRAIN CURRENT (AMPS) 3.4 V 3V 2.8 V 4 VGS = 1.4 V 2 0 0 1 2 3 4 5 6 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 2.6 V 2.4 V 2.2 V 1.8 V 8 25C 6 TC = -55C 10 125C 4 2 0 0 2 3 4 1 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 5 Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 4 ID = -2.1 A TJ = 25C 3 0.4 Figure 2. Transfer Characteristics TJ = 25C 0.35 0.3 VGS = -2.5 V 0.25 0.2 0.15 0.1 0.05 1 2 3 4 5 6 7 8 9 10 -ID, DRAIN CURRENT (AMPS) VGS = -4.5 V 2 VGS = -3.6 V 1 0 0 1 3 2 4 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 5 Figure 3. On-Resistance vs. Gate-to-Source Voltage 1.6 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) ID = -2.1 A VGS = -4.5 V 1.4 1.0E-7 IDSS, LEAKAGE (A) 1.0E-6 Figure 4. On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 150C TJ = 100C 1.2 1.0E-8 1.0E-9 TJ = 25C 1 0.8 0.6 -50 1.0E-10 1.0E-11 -25 0 25 50 75 100 125 150 0 4 8 12 16 20 TJ, JUNCTION TEMPERATURE (C) -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 NTHD5903T1 TYPICAL ELECTRICAL CHARACTERISTICS 600 Ciss 500 C, CAPACITANCE (pF) 400 Crss 300 200 Coss 100 0 -12 VDS = 0 V VGS = 0 V TJ = 25C 6 QT 5 4 3 Q1 2 1 0 0 0.5 1 1.5 2 2.5 3 Qg, TOTAL GATE CHARGE (nC) 3.5 4 ID = -2.1 A TJ = 25C Q2 2 1 0 -VDS -VGS 5 4 3 6 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 1.2 600 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) -8 -4 VGS 0 VDS 4 8 12 16 20 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 100 tf tr t, TIME (ns) td(on) IS, SOURCE CURRENT (AMPS) VDD = -10 V ID = -1.0 A VGS = -4.5 V td(off) 5 Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge VGS = 0 V TJ = 25C 4 3 10 2 1 0 1 1 10 RG, GATE RESISTANCE (OHMS) 100 0 0.2 0.4 0.6 0.8 1 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 Figure 10. Diode Forward Voltage vs. Current Notes: 0.2 0.1 0.1 0.05 0.02 Single Pulse 10-3 10-2 10 -1 1 Square Wave Pulse Duration (sec) PDM t1 t2 t1 1. Duty Cycle, D = t 2 2. Per Unit Base = RthJA = 90C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 0.01 10-4 Figure 11. Normalized Thermal Transient Impedance, Junction-to-Ambient http://onsemi.com 4 NTHD5903T1 Notes http://onsemi.com 5 NTHD5903T1 Notes http://onsemi.com 6 NTHD5903T1 PACKAGE DIMENSIONS ChipFET CASE 1206A-03 ISSUE D A 8 7 6 5 M K 5 6 3 7 2 8 1 S 1 2 3 4 B 4 L G D J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE. 4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL AND VERTICAL SHALL NOT EXCEED 0.08 MM. 5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS. 6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD SURFACE. 7. 1206A-01 AND 1206A-02 OBSOLETE. NEW STANDARD IS 1206A-03. DIM A B C D G J K L M S MILLIMETERS MIN MAX 2.95 3.10 1.55 1.70 1.00 1.10 0.25 0.35 0.65 BSC 0.10 0.20 0.28 0.42 0.55 BSC 5 NOM 2.00 1.80 INCHES MIN MAX 0.116 0.122 0.061 0.067 0.039 0.043 0.010 0.014 0.025 BSC 0.004 0.008 0.011 0.017 0.022 BSC 5 NOM 0.072 0.080 C 0.05 (0.002) STYLE 2: PIN 1. 2. 3. 4. 5. 6. 7. 8. SOURCE 1 GATE 1 SOURCE 2 GATE 2 DRAIN 2 DRAIN 2 DRAIN 1 DRAIN 1 http://onsemi.com 7 NTHD5903T1 ChipFET is a trademark of Vishay Siliconix. ON Semiconductor is a trademark and is a registered trademark of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 NTHD5903T1/D |
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